Figure:
1. Silicon sample surface irradiated with femtosecond laser pulses, showing rippling structures.
2. Protective layer deposited prior to FIB milling to protect target area.
3. Ion milling carried out on both sides of the desired cross-section area.
4. The thinned section is detached from the sample and lifted out with a manipulator.
5. The thinned section is attached to a TEM grid.
6. Further thinning of the sample is carried out for TEM analysis.
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