Electrostatic doping of new materials: challenges, opportunities and first accomplishments.
Feb 28, 2007
3:30PM to 4:30PM
Date(s) - 28/02/2007
3:30 pm - 4:30 pm
Title: Electrostatic doping of new materials: challenges, opportunities and first accomplishments.
Speaker: Dr. D.N. Basov
Institute: University of California, San Diego
Location: ABB 102
One focus of contemporary condensed matter physics is to explore novel electronic and magnetic effects prompted by introducing a high density of mobile charges in an insulating host, usually via chemical doping. Electrostatic doping achieved by integrating a host material of interest in an architecture of a field-effect transistor offers an appealing alternative. Indeed, the electrostatic modulation of carrier density is reversible and it does not introduce disorder inevitable in chemically doped substances. I will present an overview of recent progress with this challenging endeavor and will describe advances in the understanding of intrinsic transport properties of organic semiconductors enabled by the electrostatic doping of high quality organic molecular crystals.